Классификация нано-объектов презентация

в твердых телах.
Упругие деформации и напряжения в наноструктурах.
Пластическая деформация наноструктур.
Разрушение наноструктур.
Упругие волны и внутреннее трение.

систем.
Элементы нано-электро-механических систем. 2.1 Пассивные элементы. 2.2 Активные элементы. 2.3 Нанодатчики.
Применения нано-электро-механических систем. 3.1 Фотоника. 3.2 Электроника. 3.3 Транспорт. 3.4 Информатика. 3.5 Биология и медицина. 3.6 Микрожидкостные системы.
Мировая экономика НЭМС.

L.B., Suresh S. “Thin film materials: stress, defect formation and surface evolution” (Cambridge University Press, Boston, 2003, 2009).
Maluf N., Williams K. “An Introduction to Microelectromechanical Systems Engineering” (2nd edition. Artech House, Boston, London, 2004).
Дополнительная
Hearn E.J. “Mechanics of Materials” vol.1-2 (Butterworth-Heinemann, Oxford, Auckland, Boston, 1997).
Hearth J.P., Lothe, J. “Theory of Dislocations” (3rd edition. Willey Interscience, New York, 1982) [Хирт Дж., Лоте И. “Теория дислокаций” (М, Атомиздат 1972)].
Лурье А.И. “Теория упругости” (М., Наука, 1970).
Елисеев В.В. “Механика упругих тел” (СПбГТУ, 1999).
Работнов Ю.Н. “Сопротивление материалов” (М., Физ.-Мат. Лит., 1962).
Ziman J.M. “Priciples of the Theory of Solids” (2nd edition. Cambidge University Press, 1972). [Займан Дж. “Принципы теории твердого тела” (М., Мир, 1974)].
Случинская А.И. “Основы материаловедения и технологии полупроводников” (М., 2002).
Вайнштейн Б.К. “Современная кристаллография. Том 1. Симметрия кристаллов. Методы структурной кристаллографии.” (М., Наука, 1979).
Johnson K.L. “Contact mechanics” (Cambridge University Press, Boston, 1985).

the vertical cavity surface emitting laser. (After Choquette (2002).) (b) cross-sectional TEM image of the optical cavity and the surrounding DBR mirror region which comprises alternating layers of high- and low-refractive index material. The thickness of the optical cavity is 250 nm.

(a)

(b)

surface micromachining
and e-beam lithography. (a) A compound torsional oscillator tilting mirror.
(b) Silicon nanowire resonant structures. (After Craighead (2000))

мишень осаждается на подложку в вакуумной камере.
Типичная скорость напыления 0.1-0.3 мкм/мин.
Типичная температура < 150 °С.
Материалы: алюминий, титан, хром, платина, палладий, вольфрам, Al/Si и Ti/W сплавы, аморфный кремний, изоляторы, включая стекла и пьезокерамики (PZT и ZnO).
Реактивное распыление металлов с участием азота или кислорода приводит к образованию пленок таких соединений как TiN или TiO2.

соединений metal-organic chemical vapor deposition (MOCVD)

Схема промышленной установки MOCVD

металлоорганических соединений (MOVPE, MOCVD).

Моды роста:
Франка—ван дер Мерве (Frank—van der Merve, FM)
Фолмера—Вебера (Volmer—Weber, VW)
Странского—Крастанова (Stranski—Krastanow, SK)

= kTv ln(p/pe), where k = 1.38x10−23 J/K = 8.617x10−5 eV/K

новой фазы за счет флуктуаций.
Начальный рост (Initial growth) - Рост за счет обеднения прилегающих областей матрицы.
Коалесценция (Ostwald ripening) - Рост крупных частиц за счет растворения мелких частиц.

частицы новой фазы связано с образованием поверхности раздела фаз

образования зародыша новой фазы

островки (Volmer - Weber island growth mode)
γs – γfs > γf – полное смачивание; послойный рост пленки (Frank - van der Merwe growth mode)

Дж/м2
k = 1.38 10-23 Дж/К
a = ?

Внутри частицы новой фазы давление повышено

островки

Выращивание усов (whiskers, nanowires, rods) – массивов квантовых проволок – по механизму пар-жидкость-кристалл (ПЖК)

ZnO nanowires grown on a-plane sapphire. The nanowires grow perpendicular to the substrate and with nearly perfect rotational alignment with respect to the substrate lattice. Scale bars are 100 nm. Baxer et. al. JCG 274, 407 (2005).

rods (a), dense filmlike nanoplatelets (c), flowerlike nanoplatelets (e), nanobelts (g), and nanowires (i).
The corresponding high magnification images are displayed in (b), (d), (f), (h), and (j), respectively. After C. Ye., X. Fang, Y. Hao, X. Teng, L. Zhang, J. Phys. Chem. B 2005;

(A) Nanowires and nanorods; (B) core–shell structures with metallic inner core, semiconductor, or metal-oxide; (C) nanotubules/nanopipes and hollow nanorods; (D) heterostructures; (E) nanobelts/nanoribbons;
(F) nanotapes; (G) dendrites; (H) hierarchical nanostructures; (I) nanosphere assembly; (J) nanosprings.

From: Kolmakov A, Moskovits M. Annu. Rev. Mater. Res. 2004;

surface of a gold nanocluster leading to nucleation and directed nanowire growth. b, One-dimensional growth is maintained as reactant decomposition on the gold catalyst is strongly preferred. c, Synthetic conditions are altered to induce homogeneous reactant decomposition on the nanowire surface, leading to a thin, uniform shell (blue). d, Multiple shells are grown by repeated modulation of reactants. (L.J. Lauhon, et al, Nature 2002.)

respectively, of an unannealed intrinsic silicon core and p-type silicon shell nanowire grown at 450 °C. Crystal facets in the high-resolution TEM image designated by arrows indicate initially epitaxial shell growth at low temperature. Scale bars are 50 nm and 5 nm, respectively. c, d, TEM images (analogous to a and b) of an i-Si/p-Si core–shell nanowire annealed at 600 °C for 30 min after core–shell growth at 450 °C. Inset, two-dimensional Fourier transforms of the image depicting the [111] zone axis of the single crystal nanowire. The 1/3 {422} reflections, although forbidden in bulk silicon, arise as a result of the finite thickness of the nanowire. e, f, TEM images of an i-Si/SiOx/p-Si nanowire. The oxide layer is too thin (<1 nm) to discern in the high resolution image, but the sharp interface (dashed line) between the crystalline core and amorphous overcoat clearly differs from the faceting seen in b and illustrates the disruption of epitaxy. Inset, TEM image of p-Si coating the nanowire and the Au nanocluster tip. Scale bar is 50 nm. g, Three-terminal current (I ) versus voltage (V ) measurements of the nanowires described in the preceding panels. Curves b, d and f are labelled according to the representative TEM image (b, d and f) from the same sample of wires. Curve f has been multiplied by a factor of 104. Insets, current versus backgate voltage to determine field-effect mobilities.

core (blue circles), 10-nm Ge shell (red circles) and <1 nm interface.

Cross-sectional elemental mapping of a double-shell structure with an intrinsic silicon core (diameter, 20 nm), intrinsic germanium inner shell (thickness, 30 nm), and p-type silicon outer shell (4 nm); silicon is blue circles and germanium is red circles.

the cross-section of the as-grown nanowire, starting with a p-doped Si core (blue, 10 nm) with subsequent layers of i-Ge (red, 10 nm), SiOx (green, 4 nm), and p-Ge (5 nm). The source (S) and drain (D) electrodes are contacted to the inner i-Ge core, while the gate electrode (G) is in contact with the outer p-Ge shell and electrically isolated from the core by the SiOx layer.
b, Scanning electron micrograph (SEM) of a coaxial transistor. Source and drain electrodes were deposited after etching the Ge (30% H2O2, 20 s) and SiOx layers (buffered HF, 10 s) to expose the core layers. The etching of these outer layers is shown clearly in the inset and is indicated by the arrow. The gate electrodes were defined in a second step without any etching before contact deposition. Scale bar is 500 nm.
c, Gate response of the coaxial transistor at VSD = 1 V, showing a maximum transconductance of 1500 nA/ V. Charge transfer from the p-Si core to the i-Ge shell produces a highly conductive and gateable channel.

Теория нуклеации.

Определить размеры критических зародышей и давление в них: 1) в газовой фазе
2) в конденсированной среде
3) для критического островка, имеющего форму сферического сегмента, на плоской поверхности этой среды.

Коэффициенты поверхностного натяжения материала новой фазы γf = 1 Дж/м2 ; исходной среды γs = 0.5 Дж/м2; границы раздела γfs = 0.2 Дж/м2
Пересыщение с/сeq = 1.1.
Температура = 727оС
Радиус молекулы = 1 Å